Industry Leading SiC Wafer Supplier for Semiconductor Demands

As a leading global SiC wafer supplier, HMT empowers innovation with our industry-leading 8-inch Nitrogen-doped (N-type) SiC wafers and 6-inch Aluminum-doped (P-type) SiC wafers, available in multiple grades to suit diverse technical requirements. We also specialize in ultra-high-resistivity undoped SiC wafers (>1E5 Ω·cm), ideal for specialized RF and power applications.

SiC Product Range & Legacy Support

• N-Type SiC Wafers (2/4/6/8-inch): Maximize yield and performance for high-power devices like MOSFETs and SBDs.

• P-Type SiC Wafers (2/4/6-inch): Optimized for advanced optoelectronics and sensor technologies.

• Un-doped SiC Wafers: Exceptional resistivity (>1E5 Ω·cm) for RF components, GaN HEMT substrates, and quantum computing.

• Legacy Wafer Sizes: Continue production seamlessly with 2-inch and 4-inch SiC wafers—even for discontinued dimensions.
   
  

Why Partner with HMT?

• Leadership: Largest 8-inch SiC wafer production capacity, driving cost efficiency and scalability.

• Precision Doping Control: Tight tolerances for dopant uniformity, ensuring repeatable device performance.

• Future-Ready Flexibility: From R&D prototypes to mass production, we adapt to your supply chain needs.
  
  

Applications Driving Innovation

HMT’s doped and undoped SiC wafers enable breakthroughs in:

• 5G & RF Systems: Ultra-low-loss substrates for mmWave amplifiers and satellite communications.

• EV Power Trains: High-voltage SiC devices for faster charging and extended battery range.

• Industrial Power Modules: Robust solutions for renewable energy inverters and smart grid infrastructure.
  
  

Secure Your Competitive Edge Today!
Whether upgrading to 8-inch wafers or sourcing legacy sizes, HMT delivers quality, consistency, and technical expertise.
Contact us now to discuss customized SiC solutions or request a sample—let’s accelerate your next-generation semiconductor project!