Further Application of SiC Power Devices In New Energy Vehicles

As a leader in production-grade SiC substrate manufacturing, HMT delivers P-MOS grade SiC silicon carbide wafers with ultra-low MPD (Micropipe Density), tight TTV/LTV/Warp tolerances, and unmatched consistency. Our wafers are optimized for demanding semiconductor applications, ensuring reliability in high-power and high-frequency environments.

SiC (SiC) possesses excellent electrical properties such as high voltage resistance, high temperature resistance, high frequency, and radiation resistance. It breaks through the physical limitations of silicon-based semiconductor materials and has become a core material in the third generation of semiconductors. The superior performance of SiC materials is driving a new revolution in power devices. 

The role of power devices is to manage, convert, and control electrical energy. Compared to silicon-based power devices, power devices made with SiC substrates offer advantages such as high voltage resistance, high temperature resistance, low energy loss, and high power density, enabling the miniaturization and lightweight of power modules. For MOSFETs of the same specifications, the size of SiC-based MOSFETs can be significantly reduced to 1/10 of that of silicon-based MOSFETs, and the on-resistance can be reduced to at least 1/100 of that of silicon-based MOSFETs. Compared to silicon-based IGBTs, the total energy loss of SiC-based MOSFETs of the same specifications can be greatly reduced by 70%.

SiC devices are used in vehicle charging systems and power conversion systems, effectively reducing switching losses, increasing the maximum operating temperature, and improving system efficiency. Currently, more than 20 automotive manufacturers worldwide are using SiC power devices in vehicle charging systems. When applied in new energy vehicle charging stations, SiC devices can reduce the size of the charging stations and increase charging speed. The application of SiC in new energy vehicles will significantly reduce the weight of the vehicle while ensuring its strength and safety performance, effectively increasing the driving range of electric vehicles by more than 10% and reducing the volume of the electronic control system by 80%.

The market space for SiC in DC fast charging stations is expected to grow significantly in the future. Due to cost reasons, the proportion of SiC devices used in DC charging stations is currently relatively low. However, by incorporating SiC power devices, DC fast charging stations can greatly simplify internal circuits, improve charging efficiency, reduce the size and cost of heat sinks, and decrease the overall size and weight of the system. With the application of 800V fast-charging technology, the SiC market for DC charging stations is expected to experience rapid growth.