SiC Wafer Manufacturer

HMT as one of the main SiC Wafer Manufacturer and Supplier, we provide 2 inch 4 inch 6 inch and 8 inch SiC Wafer, As cut SiC Wafer and SiC Boules both for 4H-N type and  4H-SI type. Our N type SiC wafer thickness for 4 inch and 6 inch is 350um, for 8 inch is 500um. Our SiC wafers have low MPD, TTV, LTV,polytype area etc Parameters, meanwhile we can support customization upon customers SiC Wafer requirements, like thickness, TTV LTV WARP parameters etc...HMT use of the Internet and logistics to provide highly efficient and stable global supply of all SiC Wafer Products.

SiC has wide band gap width, high breakdown electric field, high thermal conductivity and high electron saturation rate of physical properties, so that it has high temperature resistance, high pressure resistance, high frequency, high power, radiation resistance and other advantages, can reduce downstream product energy consumption, reduce terminal volume.  The band gap width of SiC is about 3.2eV, and the wide band width of silicon is 1.12eV, which is about 1/3 of the band gap width of SiC, indicating that SiC has significantly better high pressure resistance than silicon material.  

SiC has high energy conversion efficiency, and will not decrease with the increase of frequency, SiC device operating frequency can reach 10 times of silicon based devices, the same specification of SiC MOSFET total energy loss is only 30% of silicon based IGBT.  SiC materials will gradually replace silicon in the fields of high temperature, high frequency and high frequency, and play an important role in 5G communications, aerospace, new energy vehicles and smart power grids.  

Conductive N Type SiC Wafer                Semi-insulated SI Type SiC Wafer