4 inch 4H-N SiC Wafer

Are you looking for 4 inch 4H-N SiC Wafer? As the professional 4 inch SiC Wafer supplier and manufacturer, HMT still can supply 100±0.25mm 4 inch Silicon Carbide Substrate Wafer at the present. Production Grade 4 inch SiC substrates are used for semiconductor produce like growing SiC Epi layer, D garde 4 inch SiC wafer are used for various testing. We also provide different thickness of 4 inch As cut Wafer like 650um 900um etc...We always provide preferential price for all 4 inch SiC Wafer, Raw Cut SiC wafers and 4 inch SiC boules, please contact us for quotation. 

4 inch SiC Wafer                                                      4  inch SiC Boule

Basic Parameters
Dimension：  4 inch  
Thickness:   350um 
Dopant: Conductive N nitrogen
Resistivity: 0.015-0.028ohm.cm
Orientation: off axis 4.0 toward<1120>±0.15°
Grade: D grade R grade P grade
MPD: Different grade has different MPD parameters
Surface: Si face CMP C face polished