P Grade SiC Substrate Wafer Manufacturer

SiC Wafer Manufacturer Homray Material Technology produce 2 inch 4 inch 6 inch and 8 inch SiC Substrate Wafer for Conductive 4H-N type and Semi-insulated HPSI type. We have SiC Substrate Wafer with D grade R grade and Production grade for different applications. The N type SiC Wafer dopant with Nitrogen and SI type is undoped. We provide best price for SiC Wafer with high quality.

Basic Parameters

Dimension：2 inch 4 inch 6 inch 8 inch
Thickness: 350um 500um
Dopant: Conductive N nitrogen
Resistivity: 0.015-0.028ohm.cm
Orientation: off axis 4.0 toward<1120>±0.15°
Grade: D grade R grade P grade
MPD: Different grade has different MPD parameters
Surface: Si face CMP C face polished

 

Silicon carbide material is divided into semi-insulating SiC Substrate and conductive SiC wafer, different from silicon based devices, SiC devices can not be directly made on the substrate, must use chemical vapor deposition on the substrate surface to generate the required film, that is, to form an epitaxial sheet, and then further made of devices. Growing SiC epitaxial layer on conductive SiC substrate, SiC epitaxial sheet can be prepared, it can be further made into SiC diode, SiC MOSFET and other power electronic devices, these devices can adapt to high temperature, high frequency, high voltage working state, can meet the compact high power density product requirements, mainly used in electric vehicles, aerospace and other fields.