4 inch 4H Silicon Carbide Substrate Manufacturer SBD MOSFET IGBT

As a leading manufacturer of 4-inch 4H-SiC substrates, we provide special specifications SiC wafers optimized for SBD, MOSFETs, and IGBTs. Our SiC products include 4H-N and 4H-SI type SiC substrate, SiC Epitaxy Wafers and customized services. Our 4H-SiC substrates offer superior thermal conductivity, high breakdown voltage, and excellent electron mobility, making them ideal for power electronics, RF devices, and high-temperature applications.

Key Features:

✔ High Purity & Low Defects – Precision-engineered for optimal device performance
✔ 4H Polytype Structure – Enhanced electrical properties for power and RF semiconductors
✔ Optimized for SBD, MOSFET & IGBT – Supports fast switching and high-efficiency designs
✔ Advanced CMP Polishing – Ultra-smooth, flat surfaces for superior epitaxial growth

SiC Substrate Specification:
Size: 4inch;
Diameter: 100mm±0.25;
Thickness: 350um±25;
Surface Orientation: 4°toward[11-20]±0.5°
Micropipe: ≤0.5/cm2;
Resistivity: 0.015~0.028Ω;
TTV≤10um;
Warp≤35um;
Bow≤25um;
Surface Roughness: Si face Ra＜0.5 nm;
Surface finish: Double Side Polish, Si Face CMP;
Packing: Multi-wafer Cassette Or Single Wafer Container;

Applications:

• Power Devices: SBDs, MOSFETs, IGBTs for EVs, renewable energy, and industrial systems

• RF & Microwave Electronics: High-frequency amplifiers and wireless communication

• High-Temperature & Harsh Environment Electronics