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HMT provides P Grade SiC single crystals including 2 inch, 4 inch and 6 inch silicon carbide ingots for semiconductor manufacturing, epitaxy research ...
HMT is a professional manufacturer of P Grade SiC single crystals and silicon carbide ingot materials, providing high-quality production grade SiC crystals for semiconductor device development, epitaxial growth and advanced electronic applications.
Production Grade SiC single crystal is the foundation material for manufacturing high-performance SiC wafers and semiconductor devices. With excellent thermal conductivity, high breakdown field strength and superior chemical stability, SiC materials are widely used in next-generation power electronics and high-frequency devices.
HMT provides production grade silicon carbide single crystals with stable crystal quality and reliable material performance.
Our SiC crystals are available in:
2 inch SiC single crystal
4 inch SiC single crystal
6 inch SiC single crystal
4H-SiC crystal
Conductive SiC crystal
Production grade SiC crystals are suitable for customers requiring reliable materials for wafer processing, epitaxial growth and semiconductor manufacturing evaluation.
| Item | Specification |
|---|---|
| Material | Silicon Carbide (SiC) |
| Grade | Production Grade / Dummy Grade |
| Crystal Structure | 4H-SiC |
| Diameter | 2 inch / 4 inch / 6 inch |
| Conductivity | N-type / Semi-insulating |
| Application | Wafer Manufacturing / Epitaxy / Research |
| Customization | Available |
With advanced crystal growth technology, HMT supplies different diameter SiC single crystal ingots to meet various semiconductor manufacturing requirements.
Suitable for:
Laboratory research
Material evaluation
Prototype device development
Widely used for:
Semiconductor process development
SiC wafer fabrication
Epitaxial growth evaluation
Designed for:
High-volume semiconductor manufacturing
Large-size SiC wafer production
Advanced power electronics applications

Used for:
SiC MOSFETs
Schottky diodes
Power modules
Applied in:
EV power systems
Charging infrastructure
High-efficiency power conversion
Used in:
Solar inverters
Energy storage systems
Smart grid applications
Suitable for:
High-frequency devices
Microwave applications
Communication systems
Supporting:
Crystal evaluation
Epitaxy development
Process optimization

Further Application of SiC Power Devices In New Energy Vehicles
SiC Wafer Manufacturer Production Analysis
Silicon Carbide SiC Wafer Polishing New Direction
SiC Boules and SiC Substrates industry chain
Contact: Mr.Kimrui
Phone:
Tel: Please send your detailed inquiry or requirements via email below.
Email: kim@homray-material.com
Add: Please send your detailed inquiry or requirements via email below.