Conductive N Type SiC Boule

HMT as one of professional Conductive N Type D Grade SiC Boule Suppliers for Electroplated diamond wheel granding test, providing Conductive N type SiC Boule from 4 inch to 8 inch with competitive price at the market. We speciallized in SiC Boule growth and SiC substrate wafer processing technology,established whole production lines to manufacture SiC wafers,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices.  

SiC Boule Spec

SiC Wafer material can be divided into Conductive type and Semi-Insulated type according to different resistivity, conductive SiC power devices need to grow SiC epitaxy on conductive substrate, and then further processed into MOSFET, IGBT and other devices, semi-insulated SiC RF devices through the growth of GaN epitaxy on semi-insulated SiC substrate. And then make HEMT and other RF devices. By growing homogeneous SiC epitaxy on conductive substrate can be made into power devices, mainly used in new energy vehicles, photovoltaic power generation and other fields, conductive SiC device downstream market structure of new energy vehicles accounted for 70%, charging equipment and photovoltaic accounted for 10%, industrial accounted for 13%. Heterologous gallium nitride epitaxy on semi-insulated substrates can be made into RF devices, which are mainly power amplifiers for 4G, 5G communication base stations and a new generation of radar.