Semi-insulating SiC Boule

The HMT company, a manufacturer of 6 inch SiC Boules, not only produces Conductive N-type SiC Boules but also supplies undoped Semi-insulating HPSI SiC Boules ranging in dimension from 4 inches to 6 inches. The orientation is On axis: <0001> ±0.2°. We provide both D grade for laser cutting (cold split, water laser slicing) and wire sawing machine's testing, as well as P grade for production. Welcome customers contact us for SiC Boule quotation and spec.

At present, SiC powder is mainly synthesized from high purity carbon powder and silicon powder, using physical vapor transfer method (PVT method), growing into crystals in a single crystal furnace, and then SiC crystal through slicing, grinding, polishing, cleaning and other steps to make a single crystal sheet as the substrate.

SiC is a compound semiconductor material composed of carbon and silicon, which is one of the ideal materials for making high temperature, high frequency, high power and high voltage devices. Compared with the traditional silicon material (Si), the band gap of SiC is 3 times that of Si. The thermal conductivity is 4-5 times that of silicon; The breakdown voltage is 8-10 times that of silicon; The electronic saturation drift rate is 2-3 times that of Si, which meets the needs of modern industry for high power, high voltage and high frequency. It is mainly used for the production of high-speed, high-frequency, high-power and light-emitting electronic components. The downstream application fields include smart grid, new energy vehicles, photovoltaic wind power, 5G communication, etc. Silicon carbide diodes and MOSFETs have been commercially applied.