8 inch Conductive N type SiC Wafer

As you know 8 inch SiC Wafer is the newest and biggest dimension of SiC Wafer industry. The diameter of 8 inch SiC wafer is 200mm and thickness 500±25um. we can supply both Conductive N type and SI type for customers. We have D grade 8 inch SiC substrate for testing purpose and P grade for production application. Meanwhile, if customer need 8 inch SiC Boules, we can also supply with favourable price for D grade. The leadtime of 8 inch SiC Substrate and SiC Boules about 4 weeks upon different purchase quantity.

SiC substrates can be divided into semi-insulating and conductive types. The semi-insulated substrate mainly achieves the intrinsic high resistivity of the crystal by removing various impurities in the crystal (especially shallow level impurities), while the conductive substrate achieves the low crystal resistivity by introducing nitrogen in the crystal growth process.

8 inch SiC Substrae wafer and 8 inch SiC Boule Pictures